Light emitting diode package and light emitting module including the same

ABSTRACT

A light emitting diode package includes a body part having a cavity at the upper part thereof and having a long shape in one direction; and a first lead frame and a second lead frame which are coupled to the bottom of the body part and spaced apart from each other in a transverse direction. The first lead frame includes a first mounting part exposed in the cavity; a first terminal part exposed to one side surface of the body part; and a first connection part exposed to the lower surface of the body part. The second lead frame includes a second mounting part exposed in the cavity; a second terminal part exposed to the other side surface of the body part along a one-side direction; and a second connection part exposed to the lower surface of the body part.

CROSS-REFERENCE TO RELATED APPLICATION(S)

This application is a continuation of U.S. patent application Ser. No.16/818,699, filed on Mar. 13, 2020, which is a continuation of PCTApplication No. PCT/KR2018/013441 filed Nov. 7, 2018, which claimspriority to and benefits of Korean Patent Application No.10-2017-0175453 filed Dec. 19, 2017, and Korean Patent Application No.10-2018-0133807 filed on Nov. 2, 2018. The entire contents of theaforementioned patent applications are incorporated herein by referencein their entirety.

TECHNICAL FIELD

Embodiments of the present disclosure relate to a light emitting diodepackage and a light emitting module including the same.

BACKGROUND

In general, a light emitting diode package is used as a light source invarious fields, such as a light source for backlight modules in adisplay device. In particular, the light emitting diode packages used asthe light source for backlight modules can be classified into a top typelight emitting diode package and a side-view type light emitting diodepackage. The side-view type light emitting diode package is used in anedge type backlight module to emit light to a side surface of a lightguide plate.

SUMMARY

A light emitting diode package used in an edge type backlight module isgenerally required to emit light narrowly in a thickness direction of alight guide plate, that is, in a vertical direction thereof, whileemitting light broadly in a lateral direction along an edge of the lightguide plate. To this end, the side-view type light emitting diodepackage used in the edge type backlight module generally has anelongated shape in one direction.

On the other hand, a typical side-view type light emitting diode packagehas opposite polarity terminals at one side thereof. Accordingly, theopposite polarity terminals have a narrow area and are placed close toeach other, thereby causing failure in contact between probes and theterminals upon testing.

In addition, the typical side-view type light emitting diode package hasopposite polarity connecting portions disposed on a lower surfacethereof and having a thin elongated shape. Accordingly, it is difficultfor the light emitting diode package to secure a sufficient area forelectrical connection to an external component, such as a circuit boardof a backlight module.

Embodiments of the present disclosure provide a light emitting diodepackage that includes a single-polarity terminal formed on each ofopposite side surfaces of a package substrate to secure a large area foreach terminal, thereby preventing failure in contact between probes andthe terminals.

Embodiments of the present disclosure provide a light emitting diodepackage that includes a single-polarity terminal formed on each of theopposite side surfaces of the package substrate to prevent short circuitbetween probes brought into contact with the terminals having oppositepolarities.

Embodiments of the present disclosure provide a light emitting diodepackage that can prevent failure in contact between the terminals andthe probes and short circuit between the probes, thereby enabling anaccurate classification process.

Embodiments of the present disclosure provide a light emitting modulethat has reliability through accurate classification of light emittingdiode packages.

In accordance with one embodiment of the present disclosure, a lightemitting diode package includes a main body, a first lead frame, and asecond lead frame. The main body includes a cavity formed at an upperportion thereof and has an elongated shape in one direction thereof. Thefirst lead frame is coupled to a bottom of the main body and includes afirst mount exposed to the cavity, a first terminal exposed to one sidesurface of the main body and a first connecting portion exposed to alower surface of the main body. The second lead frame is spaced apartfrom the first lead frame in a lateral direction and is coupled to thebottom of the main body. Further, the second lead frame includes asecond mount exposed to the cavity, a second terminal exposed to theother side surface of the main body and a second connecting portionexposed to the lower surface of the main body. Here, the firstconnecting portion includes a first element extending from the firstterminal and a second element extending from a portion of the firstelement towards the second terminal in the one direction. In addition,the second connecting portion includes a third element extending fromthe second terminal and a fourth element extending from a portion of thethird element towards the first terminal in the one direction.

In accordance with another embodiment of the present disclosure, a lightemitting module includes a circuit board and the light emitting diodepackage mounted on the circuit board. Here, the light emitting diodepackage emits light towards one side surface of a light guide plate.

Embodiments of the present disclosure provide a light emitting diodepackage that includes a single-polarity terminal formed on each ofopposite side surfaces of a package substrate to secure a large area foreach terminal, thereby preventing failure in contact between probes andthe terminals, and a light emitting module including the same. With thisstructure, the light emitting diode package can prevent short circuitbetween the probes brought into contact with the terminals havingopposite polarities. In addition, a package substrate can preventfailure in contact between the terminals and the probes and shortcircuit between the probes, thereby improving reliability inclassification of light emitting diode packages.

BRIEF DESCRIPTION OF DRAWINGS

The accompanying drawings, which are included to provide a furtherunderstanding of the disclosed technology, and are incorporated in andconstitute a part of this specification, illustrate exemplaryembodiments of the disclosed technology, and together with thedescription serve to describe the principles of the disclosedtechnology.

FIG. 1 to FIG. 3 are views of a package substrate according to a firstembodiment of the present disclosure. FIG. 1 is a sectional view of thepackage substrate according to the first embodiment, FIG. 2 is a bottomview of the package substrate according to the first embodiment, andFIG. 3 is a top view of the package substrate according to the firstembodiment.

FIG. 4 and FIG. 5 are views of a package substrate according to a secondembodiment of the present disclosure. FIG. 4 is a sectional view of thepackage substrate according to the second embodiment and FIG. 5 is abottom view of the package substrate according to the second embodiment.

FIG. 6 to FIG. 8 are views of a light emitting diode package accordingto one embodiment of the present disclosure. FIG. 6 is a sectional viewof the light emitting diode package according to this embodiment. FIG. 7is a bottom view of a light emitting diode chip mounted on the lightemitting diode package and FIG. 8 is a sectional view of the lightemitting diode chip.

FIG. 9 and FIG. 10 are views of a light emitting diode package accordingto another embodiment of the present disclosure. FIG. 9 is a sectionalview of the light emitting diode package according to this embodiment.FIG. 10 is a top view of the light emitting diode package according tothis embodiment.

FIG. 11 is a view of a light emitting module according to one embodimentof the present disclosure.

FIG. 12 to FIG. 21 are views of a package substrate according to a thirdembodiment of the present disclosure.

FIG. 12 to FIG. 14 are views of lead frames of the package substrateaccording to the third embodiment.

FIG. 15 is a plan view of the package substrate according to the thirdembodiment.

FIG. 16 is a bottom view of the package substrate according to the thirdembodiment.

FIG. 17 is a side view of the package substrate according to the secondembodiment.

FIG. 18 to FIG. 21 are sectional views of the package substrateaccording to the third embodiment.

FIG. 22 to FIG. 24 are views of a light emitting diode package accordingto a further embodiment of the present disclosure. FIG. 22 is a top viewof the light emitting diode package according to a further embodiment.FIG. 23 is a cross-sectional view (F1-F2) of the light emitting diodepackage shown in FIG. 22. FIG. 24 is a cross-sectional view (F3-F4) ofthe light emitting diode package shown in FIG. 22.

DETAILED DESCRIPTION OF THE EMBODIMENTS

Hereinafter, embodiments of the present disclosure will be described indetail with reference to the accompanying drawings. The followingembodiments are provided by way of example so as to fully convey thespirit of the present disclosure to those skilled in the art.Accordingly, the present disclosure is not limited to the embodimentsdisclosed herein and can also be implemented in different forms. In thedrawings, widths, lengths, thicknesses, and the like of elements orcomponents can be exaggerated for clarity and descriptive purposes.Throughout the specification, like reference numerals denote likeelements having the same or similar functions.

According to one embodiment of the present disclosure, a light emittingdiode package includes a main body, a first lead frame, and a secondlead frame. The main body includes a cavity at an upper portion thereofand has an elongated shape in one direction thereof. The first leadframe is coupled to a bottom of the main body and includes a first mountexposed to the cavity, a first terminal exposed to one short sidesurface of the main body, and a first connecting portion exposed to alower surface of the main body. The second lead frame is spaced apartfrom the first lead frame in a lateral direction and is coupled to thebottom of the main body. Further, the second lead frame includes asecond mount exposed to the cavity, a second terminal exposed to theother short side surface of the main body, and a second connectingportion exposed to the lower surface of the main body. Here, the firstconnecting portion includes a first element extending from the firstterminal and a second element extending from a portion of the firstelement towards the second terminal in the one direction. In addition,the second connecting portion includes a third element extending fromthe second terminal and a fourth element extending from a portion of thethird element towards the first terminal in the one direction.

The second element and the fourth element are disposed parallel to eachother. Further, at least one of the first connecting portion and thesecond connecting portion intersects with a central line perpendicularto the one direction.

In the light emitting diode package, a portion of the first element hasa greater width than another portion thereof and a portion of the firstelement includes a portion extending from the first terminal. Further,another portion of the first element includes a portion extending fromthe second element.

In the light emitting diode package, a portion of the third element mayhave a greater width than another portion thereof and a portion of thethird element may include a portion extending from the second terminal.Further, another portion of the third element may include a portionextending from the fourth element.

The cavity of the main body may have a width gradually increasing from alower portion thereof to an upper portion thereof. The first lead framemay further include a first through-hole formed through the first leadframe. In addition, a portion of the main body may be placed in thefirst through-hole. An upper portion of the first through-hole may havea smaller width than a lower portion thereof. The second lead frame mayfurther include a second through-hole formed through the second leadframe. In addition, a portion of the main body may be placed in thesecond through-hole.

An upper portion of the second through-hole may have a smaller widththan a lower portion thereof. The first lead frame may further include afirst groove formed on an upper surface thereof. The first groove may befilled with the main body. The second lead frame may further include asecond groove formed on an upper surface thereof. The second groove maybe filled with the main body.

A separation distance between the second element and the third elementand a separation distance between the fourth element and the firstelement may be greater than a separation distance between the secondelement and the fourth element. In addition, the separation distancebetween the second element and the third element and the separationdistance between the fourth element and the first element may be smallerthan a separation distance between the second element and a side surfaceof the main body and a separation distance between the fourth elementand the side surface of the main body.

The first mount and the second mount may have an elongated shape in onedirection.

The light emitting diode package may further include a light emittingdiode chip disposed in the cavity of the main body and electricallyconnected to the first mount and the second mount, and a sealing memberfilling the cavity to enclose the light emitting diode chip.

The light emitting diode chip may include a substrate having anelongated shape in one direction thereof, a light emitting structure, afirst bump pad, and a second bump pad. The light emitting structureincludes a first conductivity type semiconductor layer, an active layer,and a second conductivity type semiconductor layer sequentially stackedon a lower surface of the substrate. In addition, the first bump pad iselectrically connected to the first conductivity type semiconductorlayer. Further, the second bump pad is spaced apart from the first bumppad in a lateral direction and electrically connected to the secondconductivity type semiconductor layer. Further, the first bump pad andthe second bump pad extend in the one direction of the substrate. Thefirst bump pad is disposed on the first mount and the second bump pad isdisposed on the second mount.

According to another embodiment of the present disclosure, there isprovided a light emitting module including a circuit board and the lightemitting diode package mounted on the circuit board. Here, the lightemitting diode package emits light towards one side of a light guideplate.

The circuit board may include a first region in which the light emittingdiode package is disposed and a circuit pattern is formed, and a secondregion perpendicular to the first region.

In the light emitting module, the first connecting portion and thesecond connecting portion disposed on the lower surface of the lightemitting diode package may be connected to the circuit pattern in thefirst region of the circuit board. Further, in the light emittingmodule, an upper surface of the light emitting diode package throughwhich light is emitted may be disposed to face one side surface of thelight guide plate. The light emitting diode package may be provided inplural.

Hereinafter, embodiments of the present disclosure will be described indetail.

FIG. 1 to FIG. 3 are views of a package substrate according to a firstembodiment of the present disclosure. FIG. 1 is a sectional view of thepackage substrate according to the first embodiment, FIG. 2 is a bottomview of the package substrate according to the first embodiment, andFIG. 3 is a top view of the package substrate according to the firstembodiment.

Referring to FIG. 1 to FIG. 3, the package substrate 100 according tothe first embodiment includes a first lead frame 110, a second leadframe 120, and a main body 130.

The main body 130 supports the first lead frame 110 and the second leadframe 120 such that the first lead frame 110 and the second lead frame120 are spaced apart from each other while surrounding the first leadframe 110 and the second lead frame 120. For example, the main body 130is formed of a thermosetting resin.

The main body 130 has an elongated shape in one direction thereof.Accordingly, the main body 130 includes side surfaces having long sidesin one direction and side surfaces having short sides in the otherdirection. For example, a lower surface of the main body 130 may have arectangular shape including two long sides facing each other and tworelatively short sides facing each other. The main body 130 has a cavity131 formed at an upper portion thereof to receive a light emitting diodechip (not shown) therein. Referring to FIG. 1, the cavity 131 has ataper structure having a width gradually increasing from a lower portionthereof to an upper portion thereof. However, it should be understoodthat the cavity 131 is not limited thereto and may have a structurewherein the upper portion of the cavity has the same width as the lowerportion thereof.

The first lead frame 110 and the second lead frame 120 are coupled tothe bottom of the main body 130. In addition, the first lead frame 110and the second lead frame 120 are disposed to be spaced apart from eachother inside the main body 130 in a lateral direction and are insulatedfrom each other by the main body 130.

The first lead frame 110 includes a first mount 111, a first groove 112,a first terminal 113, and a first connecting portion 114.

The first mount 111 and the first groove 112 are formed on an uppersurface of the first lead frame 110. The first groove 112 is formed byhalf-etching the upper surface of the first lead frame 110 to form aconcave structure on the upper surface thereof. The first groove 112 isfilled with the main body 130. A bonding area between the main body 130and the first lead frame 110 is increased by the first groove 112,thereby improving coupling strength between the first lead frame 110 andthe main body 130. In addition, the first groove 112 forms a longpenetration path from a side surface of the main body 130 to theinterior of the cavity 131, thereby preventing foreign matter includingmoisture from entering the cavity 131.

The first mount 111 is exposed inside the cavity 131. The first mount111 refers to a portion of the first lead frame 110 that allows a lightemitting diode chip (not shown) to be mounted thereon and iselectrically connected thereto. The first groove 112 is formed along thecircumference of the first mount 111. Accordingly, the first mount 111protrudes above the first groove 112 filled with the main body 130 andthus is exposed to a bottom surface of the cavity 131. Referring to FIG.3, the first mount 111 may extend along one side surface of the mainbody 130, which includes a long side thereof.

A side surface of the first lead frame 110 protrudes from one sidesurface of the main body 130. The first terminal 113 includes the sidesurface of the first lead frame 110 exposed from the one side surface ofthe main body 130. That is, the first terminal 113 corresponds to a sidesurface of a portion of the first lead frame 110 protruding from the oneside surface of the main body 130. Here, the one side surface of themain body 130 corresponds to one side surface of the main body 130,which includes a short side thereof.

The first connecting portion 114 is exposed to the lower surface of themain body 130. The first connecting portion 114 refers to a portion ofthe first lead frame 110 electrically connected to external components,such as a circuit board and the like. The first connecting portion 114includes a first element 115 and a second element 116. The firstconnecting portion 114 further includes a first expanded portion 117which will be explained in detail later.

The first element 115 is connected to the first terminal 113. Accordingto this embodiment, since the first element 115 extends from the firstterminal 113, the first element 115 may have the same width as or asimilar width to the first terminal 113. Referring to FIG. 1 to FIG. 3,since the first terminal 113 corresponds to a side surface of a portionof the first lead frame 110 protruding from the one side surface of themain body 130, the first element 115 includes a lower surface of theportion of the first lead frame 110 protruding from the one side surfaceof the main body 130. That is, the first element 115 has a large areaextending to an external region of the main body 130 instead of beingrestrictively placed in regions of the main body 130.

The second element 116 extends from a portion of the first element 115and has an elongated structure. Here, the second element 116 extendsfrom the first element 115 towards the second terminal 123 disposed atan opposite side to the first terminal 113. Referring to FIG. 3, thesecond element 116 has a narrower width than the first element 115.

Although the first connecting portion 114 is illustrated as beingdivided into the first element 115 and the second element 116 indescription of the first embodiment, it should be noted that thisdescription is provided for convenience and the first element 115 andthe second element 116 are integrally connected to each other.

The second lead frame 120 includes a second mount 121, a second groove122, a second terminal 123, and a second connecting portion 124, asshown in FIGS. 1-3.

The second mount 121 and the second groove 122 are formed on an uppersurface of the second lead frame 120. The second groove 122 is formed byhalf-etching the upper surface of the second lead frame 120 to form aconcave structure on the upper surface thereof. The second groove 122 isfilled with the main body 130. A bonding area between the main body 130and the second lead frame 120 may be increased by the second groove 122,thereby improving coupling strength between the second lead frame 120and the main body 130. In addition, like the first groove 112, thesecond groove 122 may form a long penetration path along which foreignmatter including moisture enters the cavity 131.

Referring to FIG. 1, the first groove 112 and the second groove 122 aredisposed outside the cavity 131 of the main body 130. However, it shouldbe understood that the first groove 112 and the second groove 122 arenot necessarily disposed outside the cavity 131. The locations of thefirst groove 112 and the second groove 122 may be changed, as needed.

The second mount 121 is exposed inside the cavity 131. The second mount121 refers to a portion of the second lead frame 120 that allows a lightemitting diode chip (not shown) to be mounted thereon and iselectrically connected thereto. The second groove 122 is formed alongthe circumference of the second mount 121. Accordingly, the second mount121 protrudes above the second groove 122 filled with the main body 130and thus is exposed from the bottom surface of the cavity 131. Referringto FIG. 3, the second mount 121 may extend along one side surface of themain body 130, which includes a long side thereof. With this structure,the second mount 121 is disposed to be spaced apart from the first mount111 in the lateral direction.

Although the first mount 111 and the second mount 121 are illustrated asbeing spaced apart from each other in this embodiment as shown in FIG.3, it should be understood that other implementations are possible. Thestructures of the first mount 111 and the second mount 121 may bechanged depending upon the structure of a light emitting diode chip tobe received in the cavity 131.

A side surface of the second lead frame 120 protrudes from the otherside surface of the main body 130, which includes a short side thereof.The second terminal 123 includes the side surface of the second leadframe 120 protruding from the other side surface of the main body 130.That is, the second terminal 123 corresponds to a side surface of aportion of the second lead frame 120 protruding from the other sidesurface of the main body 130.

As shown in the drawings, the first terminal 113 protrudes from the oneside surface of the main body 130 and is formed along the one sidesurface of the main body 130. In addition, the second terminal 123protrudes from the other side surface of the main body 130 and is formedalong the other side surface of the main body 130, as shown in FIGS.1-3. As such, the first terminal 113 and the second terminal 123protruding from the opposite sides of the main body 130 in the lateraldirection can reflect light.

Some fraction of light emitted from a backlight unit to a light guideplate (not shown) may be reflected by the light guide plate towards acircuit board (not shown). Here, when the package substrate 100according to this embodiment is applied to the backlight unit, the lighttraveling towards the circuit board is reflected by the first terminal113 and the second terminal 123 protruding from the main body to enterthe light guide plate (not shown). That is, the package substrate 100according to this embodiment prevents reflected light from beingabsorbed into a space between packages and reflects the light to enterthe light guide plate. Accordingly, the package substrate 100 may beapplied to the backlight unit and prevent generation of dark spots onthe light guide plate between the packages. Conventionally, sinceopposite-polarity terminals are disposed on one side surface of apackage substrate, each of the terminals is inevitably formed to anarrow width. That is, a typical package substrate allows aninsufficient area for each terminal. As a result, failure in contactbetween a probe and the terminals can occur in a process of classifyingdefective or high quality products of package substrates or lightemitting diode packages, thereby causing errors in classification.

In the package substrate 100 according to this embodiment, the firstterminal 113 and the second terminal 123 may be used as parts to whichelectric current is applied through probes upon testing of the packagesubstrate 100 or the light emitting diode package. According to thisembodiment, since only the first terminal 113 is disposed on one sidesurface of the main body 130, the first terminal 113 can be formed in alarge area. Likewise, since only the second terminal 123 is disposed onthe other side surface of the main body 130, the second terminal 123 canbe formed in a large area. Since the package substrate 100 has only oneterminal on one side surface of the main body 130, the terminals of thepackage substrate 100 have a larger area than the terminals of thetypical package substrate.

As such, the package substrate 100 according to this embodiment has asufficient contact area between the terminals and the probes, therebypreventing failure in contact between the probes and the terminals. As aresult, the package substrate according to this embodiment preventsfailure in testing, for example, classification, of package substratesor light emitting diode packages including the same, thereby improvingtest reliability.

The second connecting portion 124 is exposed to the lower surface of themain body 130. The second connecting portion 124 includes a thirdelement 125 and a fourth element 126, as shown in FIG. 2. The secondconnecting portion 124 further includes a second expanded portion 127which will be explained in detail later.

The third element 125 is connected to the second terminal 123. Accordingto this embodiment, since the third element 125 extends from the secondterminal 123, the third element 125 may have the same width as thesecond terminal 123 or a similar width thereto. In addition, like thefirst element 115, the third element 125 also has a large area extendingto an external region of the main body 130 instead of beingrestrictively placed in regions of the main body 130.

The fourth element 126 extends from a portion of the third element 125and has an elongated structure. Here, the fourth element 126 extendsfrom the third element 125 towards the first terminal 113. Referring toFIG. 3, the fourth element 126 has a narrower width than the thirdelement 125.

Referring to FIG. 2, the second element 116 is disposed parallel to thefourth element 126. In addition, at least one of the second element 116and the fourth element 126 intersects with the central lineperpendicular to one direction of the package substrate.

The typical package substrate includes connecting portions restrictivelyplaced in an interior region of the main body and has an elongatednarrow structure. On the contrary, the package substrate 100 accordingto this embodiment has a large width and includes the first element 115and the third element 125, which extend to an exterior region of themain body 130, and the second element 116 and the fourth element 126,which have an elongated structure. As such, the connecting portions ofthe package substrate 100 according to this embodiment have a largerarea than those of the typical package substrate, thereby allowingreliable and stable electrical connection to external components.

In addition, the package substrate 100 according to this embodiment hasonly one terminal on one side surface of the main body 130, therebyallowing easy electrical connection to external components through theside surface. Further, the package substrate 100 according to thisembodiment may employ all of the first connecting portion 114 and thesecond connecting portion 124 disposed on the lower surface thereof andthe first terminal 113 and the second terminal 123 disposed on the sidesurfaces thereof for electrical connection to external components. Thatis, the package substrate 100 can achieve electrical connection toexternal components through a larger area including the lower surfaceand the side surfaces thereof.

In the typical package substrate, the opposite polarity terminals aredisposed on one side of the package substrate. Accordingly, the oppositepolarity terminals are placed close to each other, thereby causing shortcircuit upon contact between probes and the opposite polarity terminals.On the contrary, the package substrate 100 according to this embodimentincludes only one terminal on one side surface of the main body 130,thereby preventing short circuit when the probes are brought intocontact with the opposite polarity terminals.

Further, in the package substrate 100 according to this embodiment, atleast one of the first connecting portion 114 and the second connectingportion 124 intersects with the central line perpendicular to onedirection of the package substrate, thereby improving strength of thecenter of the package substrate 100.

According to this embodiment, a portion of each of the first element 115and the third element 125 has a greater width than another portionthereof. The portion of the first element 115 having a greater widthincludes a portion extending from the first terminal 113 and the portionof the third element 125 having a greater width includes a portionextending from the second terminal 123. Further, a portion of the firstelement 115 having a small width includes a portion extending from thesecond element 116 and a portion of the third element 125 having a smallwidth includes a portion extending from the fourth element 126.

For convenience of description, portions of the first element 115 andthe third element 125 expanded to have greater widths will be referredto as a first expanded portion 117 and a second expanded portion 127,respectively. Referring to FIG. 2, other portions of the firstconnecting portion 114 and the second connecting portion 124 excludingthe first expanded portion 117 and the second expanded portion 127 areplaced in regions inside the first expanded portion 117 and the secondexpanded portion 127.

A side surface of each of the first expanded portion 117 and the secondexpanded portion 127 corresponds to a portion of the first or secondlead frame to be cut in a separation process by which plural lead framesconnected to each other are individually divided. Without the firstexpanded portion 117 and the second expanded portion 127, burrs can begenerated from the first lead frame 110 and the second lead frame 120when a cutting blade brushes against one side surface of each of thefirst lead frame 110 and the second lead frame 120 in the process ofseparating the lead frames. That is, the first expanded portion 117 andthe second expanded portion 127 can prevent generation of burrs from thelead frames by preventing other portions of the first-1 and thirdelements excluding the first expanded portion 117 and the secondexpanded portion 127 from contacting the cutting blade in the process ofseparating the lead frames.

Further, the first expanded portion 117 and the second expanded portion127 are connected to the first terminal 113 and the second terminal 123to protrude from both side surfaces of the main body 130, respectively.Accordingly, the first expanded portion 117 and the second expandedportion 127 also serve to reflect light together with the first terminal113 and the second terminal 123. As such, each of the first expandedportion 117 and the second expanded portion 127 may be formed to a widthpreventing generation of burrs in the process of separating the leadframes while reflecting as much light as possible.

Further, according to this embodiment, a separation distance between thesecond element 116 and the third element 125 and a separation distancebetween the fourth element 126 and the first element 115 are greaterthan a separation distance between the second element 116 and the fourthelement 126.

Since each of the first element 115 and the third element 125 has alarge area, a large amount of a bonding agent is used upon bonding ofthe package substrate 100 to an external component. Here, when theamount of the bonding agent increases, the bonding agent can flow to anouter region of the first element 115 and the third element 125 uponcompression of the package substrate 100 on the external component.Then, electrical conduction can occur between the first element 115 andthe fourth element 126 or between the third element 125 and the secondelement 116. Thus, in order to prevent this problem, the separationdistance between the second element 116 and the third element 125 andthe separation distance between the fourth element 126 and the firstelement 115 are set with reference to a separation distance between thesecond element 116 and the fourth element 126 not allowing electricalconduction by the bonding agent.

However, when the separation distance between the second element 116 andthe third element 125 and the separation distance between the fourthelement 126 and the first element 115 are too large, the size of thepackage substrate 100 may increase. Thus, in order to preventundesirable increase in size or length of the package substrate 100, theseparation distance between the second element 116 and the third element125 and the separation distance between the fourth element 126 and thefirst element 115 are configured to be smaller than a separationdistance between the second element 116 and the side surface of the mainbody 130 and a separation distance between the fourth element 126 andthe side surface of the main body 130, respectively.

FIG. 4 and FIG. 5 are views of a package substrate according to a secondembodiment of the present invention. FIG. 4 is a sectional view of thepackage substrate according to the second embodiment and FIG. 5 is abottom view of the package substrate according to the second embodiment.

In description of the package substrate 200 according to the secondembodiment, descriptions of the same components as those of the packagesubstrate 100 according to the first embodiment (FIG. 1 to FIG. 3) willbe omitted and the following description will focus on differentfeatures of the package substrate 200 according to the secondembodiment.

Referring to FIG. 4 and FIG. 5, in the package substrate 200 accordingto the second embodiment, a first lead frame 210 is formed with a firstthrough-hole 211 and a second lead frame 220 is formed with a secondthrough-hole 221.

The first through-hole 211 is disposed between the first groove 112 andthe first terminal 113 of the first lead frame 210 and is formed topenetrate the first lead frame 210 from an upper surface of the firstlead frame 210 to a lower surface thereof. In addition, the secondthrough-hole 221 is disposed between the second groove 122 and thesecond terminal 123 of the second lead frame 220 and is formed topenetrate the second lead frame 220 from an upper surface of the secondlead frame 220 to a lower surface thereof.

The first through-hole 211 formed through the first lead frame 210 andthe second through-hole 221 formed through the second lead frame 220 arefilled with the main body 130. A bonding area between each of the firstlead frame 210 and the second lead frame 220 and the main body 130 isincreased by the first through-hole 211 or the second through-hole 221,thereby improving coupling strength therebetween.

Each of the first through-hole 211 and the second through-hole 221 mayhave a structure wherein an upper portion has the same width as a lowerportion, or alternatively, may have a stepped structure wherein theupper portion has a different width from the lower portion.

For example, the first through-hole 211 and the second through-hole 221may have a structure wherein the upper portion has a smaller width thanthe lower portion, as shown in FIG. 4. In this structure, a portion ofthe main body 130 filling the lower portion of the first through-hole211 is caught by the upper portion of the first through-hole 211 havinga small width, whereby the main body 130 can be secured to the firstlead frame 210. Further, when the second through-hole 221 has astructure wherein the upper portion has a smaller width than the lowerportion, the main body 130 can be secured to the second lead frame 220.Accordingly, with such structures of the first through-hole 211 and thesecond through-hole 221, the package substrate 200 enables firmercoupling between the main body 130 and each of the first lead frame 210and the second lead frame 220.

FIG. 6 to FIG. 8 are views of a light emitting diode package accordingto one embodiment of the present disclosure.

FIG. 6 is a sectional view of the light emitting diode package 300according to this embodiment as shown in FIGS. 4-5. In addition, FIG. 7is a bottom view of a light emitting diode chip mounted on the lightemitting diode package and FIG. 8 is a sectional view of the lightemitting diode chip as shown in FIG. 7.

The light emitting diode package 300 according to this embodiment (shownin FIG. 6) includes a package substrate 200, a light emitting diode chip400, and a sealing member 310.

The package substrate 200 shown in FIG. 6 is the package substrateaccording to the second embodiment. However, it should be understoodthat the package substrate 200 is not limited to the package substrateaccording to the second embodiment and may include the package substrateaccording to the first embodiment. The light emitting diode chip 400 isdisposed in the cavity 131 of the package substrate 200. The lightemitting diode chip 400 may have a structure wherein bump pads (notshown) having opposite polarities are formed on a lower surface thereof.The bump pads of the light emitting diode chip 400 may correspond to thefirst mount 111 and the second mount 121 of the package substrate 200.

Referring to FIG. 7 and FIG. 8, the light emitting diode chip 400according to this embodiment includes a substrate 410, a light emittingstructure 420, an ohmic reflective layer 430, a first insulation layer440, a first pad metal layer 451, a second pad metal layer 452, a secondinsulation layer 460, a first bump pad 470, and a second bump pad 480.With these components, the light emitting diode chip 400 has a structurewherein a lower periphery of the light emitting diode chip 400 has anelongated shape including long sides and short sides. Here, the longsides refer to sides of the lower periphery having a long length and theshort sides refer to sides of the lower periphery having a shorterlength than the long sides.

The substrate 410 may be selected from any structures allowing growth ofa gallium nitride semiconductor layer thereon without limitation. Forexample, the substrate 410 may include a sapphire substrate, a galliumnitride substrate, a SiC substrate, and the like, and may be a patternedsapphire substrate. The substrate 410 has a rectangular shape havinglong sides and short sides.

The light emitting structure 420 is formed on a lower surface of thesubstrate 410. The light emitting structure 420 includes a firstconductivity type semiconductor layer 421, an active layer 422, and asecond conductivity type semiconductor layer 423.

The first conductivity type semiconductor layer 421 is formed on thelower surface of the substrate 410. The first conductivity typesemiconductor layer 421 may be a semiconductor layer grown on thesubstrate 410 and may be a gallium nitride semiconductor layer. Thefirst conductivity type semiconductor layer 421 may be a gallium nitridesemiconductor layer doped with n-type dopants, for example, Si. Here,although the first conductivity type semiconductor layer 421 isillustrated as being distinguished from the substrate 410, a borderbetween the first conductivity type semiconductor layer 421 and thesubstrate 410 can be unclear when the substrate is a gallium nitridesubstrate.

A mesa M is disposed on a lower surface of the first conductivity typesemiconductor layer 421. The mesa M may be placed in a region of thefirst conductivity type semiconductor layer 421. Accordingly, edgeregions of the first conductivity type semiconductor layer 421 may beexposed to the outside instead of being covered by the mesa M. Inaddition, the mesa M may include a portion of the first conductivitytype semiconductor layer 421.

The mesa M includes the second conductivity type semiconductor layer 423and the active layer 422. The active layer 422 is formed on the lowersurface of the first conductivity type semiconductor layer 421 and thesecond conductivity type semiconductor layer 423 is formed on the lowersurface of the active layer 422. The active layer 422 may have a singlequantum well structure or a multi-quantum well structure. Thecomposition and thickness of well layers in the active layer 422determine the wavelengths of light. In particular, the active layer maybe formed to generate UV light, blue light or green light throughadjustment of the composition of the well layers.

The second conductivity type semiconductor layer 423 may be a galliumnitride semiconductor layer doped with p-type dopants, for example, Mg.

Each of the first conductivity type semiconductor layer 421 and thesecond conductivity type semiconductor layer 423 may be composed of asingle layer, without being limited thereto. Each of the firstconductivity type semiconductor layer 421 and the second conductivitytype semiconductor layer 423 may be composed of multiple layers and mayinclude a super-lattice layer.

The first conductivity type semiconductor layer 421, the active layer422 and the second conductivity type semiconductor layer 423 may begrown on the substrate 410 in a chamber by a method well-known in theart, such as metal organic chemical vapor deposition (MOCVD) ormolecular-beam epitaxy (MBE).

The mesa M has a slanted side surface to have an area graduallydecreasing with increasing distance from the first conductivity typesemiconductor layer 421. With this structure, layers covering the sidesurface of the mesa M can be stably formed.

The mesa M may have an elongated rectangular shape along the shape ofthe substrate 410 and may include a groove formed in a longitudinaldirection of the substrate 410 to expose the first conductivity typesemiconductor layer 421. As shown in FIG. 7, the groove may extend froma center of one short side of the mesa M adjacent to one short side ofthe substrate to pass the center of the mesa M along a long side of thesubstrate 410. The groove has a shorter length than the length of a longside of the mesa M. Thus, the other side of the mesa M having a shortlength is separated from the groove.

The ohmic reflective layer 430 is formed on a lower surface of thesecond conductivity type semiconductor layer 423 to contact the secondconductivity type semiconductor layer 423. The ohmic reflective layer430 may be disposed over substantially the entire region of the mesa inan upper region of the mesa M. Referring to FIG. 8, the ohmic reflectivelayer 430 is not disposed to cover the entirety of the upper region ofthe mesa M. For example, the ohmic reflective layer 430 may cover 80% ormore of the upper region of the mesa M. Furthermore, the ohmicreflective layer 430 may cover 90% or more of the upper region of themesa M. Although not shown in this drawing, the light emitting structuremay further include an ohmic oxide layer (not shown) disposed in theupper region of the mesa M and covering the mesa M around the ohmicreflective layer 430. With the structure where the ohmic oxide layer(not shown) is disposed around the ohmic reflective layer 430, the lightemitting structure has an enlarged ohmic contact region, therebyresulting in reduction in forward voltage of a light emitting diode.

The ohmic reflective layer 430 may include a reflective metal layer.Accordingly, the ohmic reflective layer 430 reflects light generatedfrom the active layer 422 and reaching the ohmic reflective layer 430towards the substrate 410. For example, the ohmic reflective layer 430may be composed of a single metal layer or may include an ohmic layerand a reflective layer. For example, the ohmic layer may be composed ofa metal, such as Ni, and the reflective layer may be composed of ahighly reflective metal, such as Ag or Al. In addition, the ohmicreflective layer 430 may include a barrier layer. The barrier layer maybe composed of Ni, Ti, and Au. For example, the ohmic reflective layermay have a stack structure of Ni/Ag/Ni/Ti/Ni/Ti/Au/Ti.

According to another embodiment, the ohmic reflective layer 430 mayinclude a transparent oxide layer forming ohmic contact with the secondconductivity type semiconductor layer 423, an insulation layer coveringthe transparent oxide layer and having an opening exposing thetransparent oxide layer, and a metal reflective layer covering theinsulation layer and connected to the transparent oxide layer throughthe opening of the insulation layer. With this structure, the ohmicreflective layer can provide an omnidirectional reflector.

The first insulation layer 440 covers the mesa M and the ohmicreflective layer 430. In addition, the first insulation layer 440 maycover the side surface of the mesa M. Here, the first insulation layer440 may cover a portion of the first conductivity type semiconductorlayer 421 exposed through the side surface of the mesa M. With thisstructure, the first insulation layer 440 exposes the first conductivitytype semiconductor layer 421 disposed along the periphery of the mesa M.

Further, the first insulation layer 440 is formed with at least oneopening 441 that exposes the ohmic reflective layer 430. The opening 441of the first insulation layer 440 is disposed on the lower surface ofthe mesa M on which the second pad metal layer 452 will be formed later.The second pad metal layer 452 is electrically connected to the secondconductivity type semiconductor layer 423 through the opening 441.

The first insulation layer 440 may be composed of a single layer of SiO₂or Si₃N₄. However, it should be understood that the first insulationlayer 440 is not limited thereto. For example, the first insulationlayer 440 may have a multilayer structure including a silicon nitridelayer and a silicon oxide layer, and may include a distributed Braggreflector in which silicon oxide layers and titanium oxide layers arealternately stacked one above another.

The first pad metal layer 451 is formed on a lower surface of the firstinsulation layer 440 and a lower surface of a portion of the firstconductivity type semiconductor layer 421 exposed through the firstinsulation layer 440. The first pad metal layer 451 is insulated fromthe mesa M and the ohmic reflective layer 430 by the first insulationlayer 440. With this structure, the first pad metal layer 451 contactsthe first conductivity type semiconductor layer 421 and is electricallyconnected thereto.

The second pad metal layer 452 is formed on the lower surface of thefirst insulation layer 440 having the opening 441 therein and in theopening 441 to be spaced apart from the first pad metal layer 451. Withthis structure, the second pad metal layer 452 is electrically connectedto the ohmic reflective layer 430 through the opening 441.

In some embodiments, the first pad metal layer 451 and the second padmetal layer 452 may be formed of the same material by the same process.In other embodiments, a different material and/or a different processmay be available. Each of the first pad metal layer 451 and the secondpad metal layer 452 may include an ohmic reflective layer, such as an Allayer. The ohmic reflective layer may be formed on a lower surface of abonding layer such as a Ti, Cr or Ni layer. In addition, a protectivelayer having a single layer structure of Ni, Cr or Au, or a complexlayer structure thereof may be formed on a lower surface of the ohmicreflective layer. For example, the first pad metal layer 451 and thesecond pad metal layer 452 may have a stack structure ofCr/Al/Ni/Ti/Ni/Ti/Au/Ti.

The second insulation layer 460 is formed to cover the first pad metallayer 451 and the second pad metal layer 452. The second insulationlayer 460 may cover the first conductivity type semiconductor layer 421exposed along the periphery of the mesa M. Here, the second insulationlayer 460 may expose the first conductivity type semiconductor layer 421disposed at an edge of the substrate 410.

The second insulation layer 460 includes a first opening 461 exposingthe first pad metal layer 451 and a second opening 462 exposing thesecond pad metal layer 452. The first opening 461 and the second opening462 may be disposed in regions on the lower surface of the mesa M.

Referring to FIG. 7, the first opening 461 and the second opening 462 ofthe second insulation layer 460 are spaced apart from each other and areformed in an elongated shape along the long side of the substrate 410.Further, at least one of the first opening 461 and the second opening462 may be formed to intersect with a central line C. Here, the centralline C refers to a line parallel to the short side of the lower surfaceof the light emitting diode chip 400 or the substrate 410 and passingthe center of the lower surface. That is, the central line C is a lineextending from the center between opposite short sides of the lightemitting diode chip to a long side thereof. Referring to FIG. 7, boththe first opening 461 and the second opening 462 are formed to intersectwith the central line C.

The second insulation layer 460 may be formed of a single layer of SiO₂or Si₃N₄, without being limited thereto. For example, the secondinsulation layer 460 may have a multilayer structure including a siliconnitride layer and a silicon oxide layer, and may include a distributedBragg reflector in which silicon oxide layers and titanium oxide layersare alternately stacked one above another.

Referring again to FIG. 7, the first bump pad 470 and the second bumppad 480 are formed on the first pad metal layer 451 and the second padmetal layer 452, respectively, and protrude downwards below the secondinsulation layer 460.

The first bump pad 470 is formed on a lower surface of the first padmetal layer 451 exposed through the first opening 461 of the secondinsulation layer 460. With this structure, the first bump pad 470 iselectrically connected to the first conductivity type semiconductorlayer 421 through the first pad metal layer 451.

The second bump pad 480 is formed on a lower surface of the second padmetal layer 452 exposed through the second opening 462 of the secondinsulation layer 460. With this structure, the second bump pad 480 iselectrically connected to the second conductivity type semiconductorlayer 423 through the second pad metal layer 452 and the ohmicreflective layer 430. The second pad metal layer 452 may be omitted.Here, the second bump pad 480 may directly contact the ohmic reflectivelayer 430.

Referring to FIG. 8, a lower surface of each of the first bump pad 470and the second bump pad 480 may be formed to a greater width than anupper surface thereof so as to cover a portion of a lower surface of thesecond insulation layer 460. As such, the lower surface of each of thefirst bump pad 470 and the second bump pad 480 covers the lower surfaceof the second insulation layer 460, thereby providing a large bondingarea for bonding to external components. Accordingly, it is possible toachieve reliable connection between the light emitting diode chip 400and the external components.

According to this embodiment, the light emitting diode chip 400 includesthe first bump pad 470 and the second bump pad 480 covering the lowersurface of the second insulation layer 460, as shown in FIG. 7. However,it should be understood that the structure of the light emitting diodechip 400 is not limited thereto. For example, the first bump pad 470 andthe second bump pad 480 may be restrictively placed on the first padmetal layer 451 exposed through the first opening 461 and the secondopening 462. The first bump pad 470 and the second bump pad 480 areformed along the first opening 461 and the second opening 462 of thesecond insulation layer 460. Accordingly, the first bump pad 470 isdisposed in an elongated shape along one long side of the light emittingdiode chip 400. Further, the second bump pad 480 is disposed in anelongated shape along the other long side of the light emitting diodechip 400. That is, the first bump pad 470 and the second bump pad 480are spaced apart from each other in the lateral direction to be disposedin an elongated shape along both long sides of the light emitting diodechip 400. Referring to FIG. 7, both the first bump pad 470 and thesecond bump pad 480 have a length to intersect with the central line C.

The first bump pad 470 and the second bump pad 480 are formed of anelectrically conductive material. For example, the first bump pad 470and the second bump pad 480 may be composed of a single metal layerincluding Au or TiN, or may be composed of multiple layers including anAu layer and a TiN layer. However, it should be understood that thefirst bump pad 470 and the second bump pad 480 are not limited theretoand may be formed of any electrically conductive material.

Conventionally, a light emitting diode chip having a rectangularperiphery is formed with two bump pads at opposite sides with respect tothe central line thereof. With this structure, the light emitting diodechip has a higher metal density at the opposite sides thereof than acentral region thereof. Thus, the light emitting diode chip having anelongated shape has a problem of easy bending or breakage around thecentral line.

However, the light emitting diode chip 400 according to this embodimentincludes the first bump pad 470 and the second bump pad 480 formed tointersect with the central line and thus does not suffer from such aproblem.

Although both the first bump pad 470 and the second bump pad 480according to this embodiment are formed to intersect with the centralline C, the structures of the first bump pad 470 and the second bump pad480 may be changed depending upon the structure of the first mount 111and the second mount 121 of the package substrate 200.

As shown in FIG. 6, the light emitting diode chip 400 may be secured tothe package substrate 200 by an electrically conductive bonding agentinterposed between the bump pads of the light emitting diode chip 400and each of the first mount 111 and the second mount 121 of the packagesubstrate 200. For example, the light emitting diode chip 400 may bemounted on the package substrate 200 such that the first bump pad 470and the second bump pad 480 face the first mount 111 and the secondmount 121 of the package substrate 200, respectively, followed bybonding the light emitting diode chip 400 to the package substrate 200.The sealing member 310 covers the light emitting diode chip 400 byfilling the cavity 131 of the package substrate 200 therewith. Thesealing member 310 seals the cavity 131 to prevent foreign matterincluding moisture and dust from entering the light emitting diodepackage 300. The sealing member 310 may be formed of an epoxy resin or asilicone resin. Further, the sealing member 310 may further includephosphors or a diffusing agent capable of converting light emitted fromthe light emitting diode chip 400, as needed.

Although the light emitting diode package 300 according to thisembodiment has an elongated structure, the first lead frame 210 and thesecond lead frame 220 are formed to intersect with the central line C,thereby improving strength of the center of the light emitting diodepackage. Accordingly, despite the elongated structure, the lightemitting diode package 300 is prevented from being bent or broken,thereby improving reliability of the light emitting diode package 300 ora product on which the light emitting diode package 300 is mounted.

FIG. 9 and FIG. 10 are views of a light emitting diode package accordingto another embodiment of the present disclosure. FIG. 9 is a sectionalview of the light emitting diode package according to this embodiment.FIG. 10 is a top view of the light emitting diode package according tothis embodiment.

Referring to FIG. 9 and FIG. 10, the light emitting diode package 500according to this embodiment includes a package substrate 530, a lightemitting diode chip 400, a Zener diode chip 520, and a sealing member310.

The package substrate 530 is the package substrate 100 according to thefirst embodiment (see FIG. 1 to FIG. 3), which further includes a firstZener connecting portion 511 and a second Zener connecting portion 512.Alternatively, the package substrate 530 may be the package substrate200 according to the second embodiment (see FIG. 4 and FIG. 5), whichfurther includes the first Zener connecting portion 511 and the secondZener connecting portion 512.

The first Zener connecting portion 511 is formed on an upper surface ofa first lead frame 540. The first Zener connecting portion 511 isdisposed between the first groove 112 of the first lead frame 540 andthe cavity 131 of the main body 130.

The second Zener connecting portion 512 is formed on an upper surface ofa second lead frame 550. The second Zener connecting portion 512 isdisposed between one end of the second mount 121 of the second leadframe 550 in a direction of the first terminal 113 and the cavity 131 ofthe main body 130. Accordingly, the first Zener connecting portion 511is spaced apart from the second Zener connecting portion 512 in thelateral direction.

The Zener diode chip 520 is mounted on the first Zener connectingportion 511 and the second Zener connecting portion 512 to beelectrically connected thereto. The Zener diode chip 520 is connected inparallel to the light emitting diode chip 400.

The light emitting diode package 500 according to this embodimentincludes not only the light emitting diode chip 400 but also the Zenerdiode chip 520 therein such that the light emitting diode chip 400 andthe Zener diode chip 520 are electrically connected to each otherthrough the same lead frame. Accordingly, the light emitting diodepackage 500 according to this embodiment can prevent short circuit dueto an external environment as compared with a structure where the lightemitting diode chip 400 and the Zener diode chip 520 are individuallypackaged and connected to each other through a separate circuit board.In addition, the light emitting diode package 500 according to thisembodiment allows less consumption in area than the structure where thelight emitting diode chip 400 and the Zener diode chip 520 areindividually packaged, thereby increasing in intensity of light andenabling further miniaturization of light emitting diode packages.

FIG. 11 is a view of a light emitting module according to one embodimentof the present disclosure. Referring to FIG. 11, the light emittingmodule 10 includes a circuit board 11 and a light emitting diode package300. The light emitting diode package 300 is the light emitting diodepackage described with reference to FIG. 6. For details of the lightemitting diode package 300, FIG. 6 and the descriptions associated withFIG. 6 are provided above.

The light emitting diode package 300 is mounted on the circuit board 11.In addition, the circuit board 11 is formed with interconnection lineselectrically connected to the light emitting diode package 300 mountedthereon. For example, the circuit board 11 may be a printed circuitboard, or a flexible printed circuit board including interconnectionlines on an insulation layer. Alternatively, the circuit board 11 may bea metal board including interconnection lines on an insulation layerformed on a metal layer. Alternatively, the circuit board 11 may be aceramic substrate or a synthetic resin board, such as a resin, glass, orepoxy substrate. Alternatively, the circuit board 11 may include atleast one selected from the group consisting of an epoxy moldingcompound (EMC), polyimide (PI), ceramic, graphene, glass syntheticfibers, and combinations thereof.

The circuit board 11 is divided into a first region 12 and a secondregion 13. The light emitting diode package 300 is disposed in the firstregion 12. In the first region 12, the light emitting diode package 300is electrically connected to the interconnection line of the circuitboard 11. The first region 12 is disposed to face a side surface of alight guide plate 20 that receives light emitted from the light emittingdiode package 300.

The second region 13 is perpendicular to the first region 12. That is,the second region 13 protrudes from the first region 12 towards thelight guide plate 20. The circuit board 11 is provided with a pluralityof light emitting diode packages 300 in the first region 12. The lightemitting diode packages 300 are arranged linearly in the longitudinaldirection of the first region 12.

Each of the light emitting diode packages 300 includes a packagesubstrate (not shown) and a light emitting diode chip (not shown)mounted on the package substrate. According to this embodiment, thelight emitting diode package 300 has an elongated shape in one directionof the package substrate The light emitting diode package 300 isprovided at opposite side surfaces thereof with terminals such that onlyone terminal having one polarity is disposed on one side surfacethereof. In addition, the light emitting diode package 300 is providedon a lower surface thereof with connecting portions connected to theterminals and having an elongated section. That is, each of theconnecting portions of the light emitting diode package 300 has a largearea composed of one portion connected to the terminal and anotherportion extending from the portion. Accordingly, the light emittingdiode package 300 is connected to the circuit board 11 through a largearea, thereby enabling reliable electrical connection to the circuitboard 11.

The light emitting diode package 300 according to this embodiment hasthe connecting portions exposed to the lower surface thereof and emitslight through an upper surface thereof. That is, the lower surface ofthe light emitting diode package 300 acts as a bonding surface and theupper surface thereof acts as a light emission surface. The circuitboard 11 has a structure where the first region 12 is perpendicular tothe second region 13. With this structure of the circuit board 11, whenthe light emitting diode package 300 is bonded to the first region 12 ofthe circuit board 11, the light emission surface of the light emittingdiode package 300 may be disposed to face one side surface of the lightguide plate 20 corresponding to a light incidence surface thereof. Thus,light emitted from the light emission surface of the light emittingdiode package 300 enters the light guide plate 20 through the lightincidence surface of the light guide plate 20, as shown in FIG. 11.

With the light emitting diode package 300 and the circuit board 11having the structures described above, the light emitting module 10according to this embodiment does not require bending of the lead frameto be placed on the side surface of the light emitting diode package forimplementation of a side view.

In addition, as shown in the drawings, the first terminal 113 and thesecond terminal 123 are formed to protrude from the opposite sidesurfaces of the light emitting diode package 300, respectively. Thefirst terminal 113 protrudes from one side surface of the light emittingdiode package 300. In addition, the second terminal 123 protrudes fromthe other side surface of the light emitting diode package 300.

Some fraction of light emitted from the plurality of light emittingdiode packages 300 is reflected by the light guide plate 20 towards thecircuit board 11. If light reflected by the light guide plate 20 isabsorbed by the circuit board 11 through a gap between the lightemitting diode packages, dark spots can be generated on the light exitsurface of the light guide plate. However, in the light emitting module10 according to this embodiment, light traveling towards the circuitboard 11 is reflected by the first terminal 113 and the second terminal123 protruding from the opposite side surfaces of the light emittingdiode package 300 to enter the light guide plate 20. Accordingly, thelight emitting module 10 allows light traveling toward the gap betweenthe light emitting diode packages 300 to be reflected so as not to beabsorbed by the circuit board 11, thereby preventing generation of darkspots on the light guide plate due to the gap between the light emittingdiode packages 300.

FIG. 12 to FIG. 21 are views of a package substrate according to a thirdembodiment of the present disclosure. In addition, FIG. 22 to FIG. 24are views of a light emitting diode package according to a furtherembodiment of the present disclosure. Here, the light emitting diodepackage shown in FIG. 22 to FIG. 24 is a light emitting diode package towhich the package substrate according to the third embodiment isapplied.

FIG. 12 to FIG. 14 are views of lead frames of the package substrateaccording to the third embodiment. FIG. 15 is a plan view of the packagesubstrate according to the third embodiment. FIG. 16 is a bottom view ofthe package substrate according to the third embodiment. FIG. 17 is aside view of the package substrate according to the second embodiment.In addition, FIG. 18 to FIG. 21 are sectional views of the packagesubstrate according to the third embodiment.

In describing the package substrate 600 according to the thirdembodiment, the same components as those of the package substratesaccording to the above embodiments will be briefly described or omittedand the following description will focus on different features thereof.

The package substrate 600 according to the third embodiment includes afirst lead frame 610, a second lead frame 620, and a main body 630.

A lower portion of the main body 630 surrounds the first lead frame 610and the second lead frame 620 and an upper portion of the main body 630is formed with a cavity 631 (FIG. 15). The first lead frame 610 and thesecond lead frame 620 are spaced apart from each other in the main body630 in the lateral direction and are insulated from each other by themain body 630. As shown in FIG. 12 to FIG. 14, the first lead frame 610includes a first mount 611, a first groove 612, a first Zener connectingportion 661, a first terminal 613, a first connecting portion 614, andfirst protrusions 619. In addition, the second lead frame 620 includes asecond mount 621, a second groove 622, a second Zener connecting portion662, a second terminal 623, a second connecting portion 624, and asecond protrusion 629.

FIG. 12 shows details of upper and lower portions of the first leadframe 610 and the second lead frame 620. In FIG. 12, a solid lineindicates external appearances of the upper portions of the first leadframe 610 and the second lead frame 620. That is, the solid line of FIG.12 corresponds to a plan view of the first lead frame 610 and the secondlead frame 620 shown in FIG. 13. In addition, a dotted line of FIG. 12indicates lower external appearances of the lower potions of the firstlead frame 610 and the second lead frame 620 blocked by the upperportions thereof. That is, in FIG. 12, the dotted line and the solidline connected to the dotted line correspond to a rear view of the firstlead frame 610 and the second lead frame 620 shown in FIG. 14.

Referring to FIG. 13, shadow-patterned portions of the first lead frame610 and the second lead frame 620 correspond to half-etched portions ofupper surfaces thereof. The half-etched portion of the upper surface ofthe first lead frame 610 corresponds to the first groove 612. As shownin FIG. 13, the first groove 612 is formed around the first mount 611.In addition, the half-etched portion of the upper surface of the secondlead frame 620 corresponds to the second groove 622. As shown in FIG.14, the second groove 622 is formed around the second mount 621.Referring to FIG. 14, the shadow-patterned portions of the first leadframe 610 and the second lead frame 620 correspond to half-etchedportions of lower surfaces thereof.

The lower portion of the first lead frame 610 is subjected tohalf-etching along outer peripheries of a first element 615, a secondelement 616 and a fifth element 618 in a minor axis direction thereofexcluding a portion facing a fourth element 626 of the second lead frame620 and the first terminal 613. By half-etching, lower portions of theplural first protrusions 619 are partially exposed.

In the lower portion of the first lead frame 610, a gap between thesecond element 616 and the fifth element 618 which are spaced apart fromeach other are partially subjected to half-etching.

A half-etched portion at one side of the gap between the second element616 and the fifth element 618 corresponds to a portion of a lowerportion of the first mount 611. In a cross-sectional view of thisportion, the first lead frame 610 has a structure where the lowerportion of the first mount 611 is subjected to half-etching to form athird groove 650, as shown in FIG. 18. The third groove 650 is filledwith the main body 630, thereby improving bonding strength between thefirst lead frame 610 and the main body 630.

A half-etched portion at the other side of the gap between the secondelement 616 and the fifth element 618 corresponds to a portion of alower portion of one of the first protrusions 619. Here, one side refersto a side facing the second lead frame 620 and the other side refers toa side opposite to the one side.

Accordingly, although the second element 616 and the fifth element 618are spaced apart from each other, upper portions thereof are connectedto each other by the first mount 611 and one first protrusion 619. Withthis structure, a separation space 640 in which the second element 616is spaced apart from the fifth element 618 is formed between the firstmount 611 and the first protrusion 619. That is, the first lead frame610 has a structure wherein a through-hole is formed between the firstmount 610 and the first protrusion 619. Referring to FIG. 20, theseparation space 640 is filled with the main body 630, thereby improvingbonding strength between each of the first lead frame 610 and the secondlead frame 620 and the main body 630.

First through-holes 641 as shown in FIG. 29 have a structure where alower portion thereof is subjected to half-etching to have a largerdiameter than an upper portion thereof.

First burr preventing portions 645 are formed by half-etching corners ofthe lower surface of the first lead frame 610, which are placed in theminor axis direction thereof. The first terminal 613 is disposed betweentwo first burr preventing portions 645.

Half-etched portions of the lower surface of the second lead frame 620correspond to second protrusions 629, second through-holes 642, andsecond burr preventing portions 646.

The lower portion of the second lead frame 620 is subjected tohalf-etching along outer peripheries of a third element 625 and a fourthelement 626 in a minor axis direction thereof excluding a portion facingthe first lead frame 610 and the second terminal 623. By half-etching,lower portions of the plural second protrusions 629 are partiallyexposed.

The second through-holes 642 have a structure wherein a lower portionthereof is subjected to half-etching to have a larger diameter than anupper portion thereof.

The second burr preventing portions 646 are formed by half-etchingcorners of the lower surface of the second lead frame 620, which areplaced in the minor axis direction thereof. The second terminal 623 isdisposed between two second burr preventing portions 646.

The first burr preventing portions 645 and the second burr preventingportions 646 serve to prevent generation of burrs at corners of a cutsurface upon dicing in a process of separating a plurality of packagesubstrates or light emitting diode packages connected to one another.

Each of the first lead frame 610 and the second lead frame 620 may havethe same thickness d6 (see FIG. 18) as the width of the light emittingdiode chip mounted on the package substrate 600. Here, the thickness ofeach of the first lead frame 610 and the second lead frame 620 refers toa distance from an upper surface thereof to a lower surface thereofhaving no etched portions. In addition, the width of the light emittingdiode chip refers to a distance between opposite sides of the lightemitting diode in a major axis direction thereof. For example, the firstlead frame 610 and the second lead frame 620 may have a thickness d6 of250 μm and the light emitting diode chip mounted on the packagesubstrate 600 may have a width of 250 μm.

For example, the package substrate 600 may have a total thickness of 700μm and a total width of 7,000 μm. Here, the total thickness of thepackage substrate 600 refers to a distance from the lower surface of themain body 630, to which the first connecting portion 614 of the firstlead frame 610 and the second connecting portion 624 of the second leadframe 620 are exposed, to the upper surface of the main body 630 onwhich the cavity 631 is formed. Further, the total width of the packagesubstrate 600 refers to a distance from one side surface of the mainbody 630 on which the first terminal 613 of the first lead frame 610 isexposed to the other side surface of the main body 630, to which thesecond terminal 623 of the second lead frame 620 is exposed. The totalthickness and the total width of the light emitting diode package 700(see FIG. 22 to FIG. 24), in which the light emitting diode chip ismounted on the package substrate 600 and the cavity 631 is filled withthe sealing member, are also the same as those of the package substrate600.

The first mount 611, the first groove 612 and the first Zener connectingportion 661 (FIG. 15) are formed on the upper surface of the first leadframe 610. In addition, the second mount 621, the second groove 622 andthe second Zener connecting portion 662 are formed on the upper surfaceof the second lead frame 620, as shown in FIG. 15.

Referring to FIG. 15, the first mount 611, the second mount 621, thefirst Zener connecting portion 661 and the second Zener connectingportion 662 are exposed through the cavity 631 of the package substrate600.

The first groove 612 is formed along the periphery of the first mount611 and the second groove 622 is formed along the periphery of thesecond mount 621. That is, the first groove 612 surrounds the firstmount 611 and the second groove 622 surrounds the second mount 621. Inother words, the first groove 612 or the second groove 622 is formed onthe bottom of the cavity 631 at an exposed lower portion of the mainbody 630 around the first mount 611 and the second mount 621. With thisstructure, the first groove 612 divides the first mount 611 from thefirst Zener connecting portion 661, and the second groove 622 dividesthe second mount 621 from the second Zener connecting portion 662.

As shown in FIG. 22 to FIG. 24, the light emitting diode chip 710 ismounted on the first mount 611 and the second mount 621 and iselectrically connected to the first mount 611 and the second mount 621.In addition, the first Zener connecting portion 661 and the second Zenerconnecting portion 662 are electrically connected to the Zener diodechip 720. The bump pads 711 of the light emitting diode chip 710 aredisposed on the first mount 611 and the second mount 621, respectively.

The sizes of the first mount 611 and the second mount 621 and a distancebetween the first mount 611 and the second mount 621 correspond to thesizes of the bump pads 711 of the light emitting diode chip 710 and adistance between the bump pads 711. That is, the size of each of thefirst mount 611 and the second mount 621 and the distance d1therebetween may be substantially the same as those of the bump pads ofthe light emitting diode chip 710. In this case, as shown in FIG. 22,when the light emitting diode chip 710 is mounted on the packagesubstrate 600, the light emitting diode chip 710 covers the first mount611 and the second mount 621 to prevent the first mount 611 and thesecond mount 621 from being exposed to the outside. However, it shouldbe understood that the sizes of the first mount 611 and the second mount621 are not limited to the sizes of the bump pads of the light emittingdiode chip 710. Alternatively, the first mount 611 and the second mount621 may be formed in a larger area than the bump pads of the lightemitting diode chip 710 to allow deposition of a large amount of anelectrically conductive bonding agent 730 in order to improve bondingstrength between the light emitting diode chip 710 and the packagesubstrate 600. In this case, when the light emitting diode chip 710 ismounted on the package substrate 600, the first mount 611 and the secondmount 621 can be exposed to the outside.

For example, the distance d1 between the first mount 611 and the secondmount 621 may be 250 μm.

A distance d2 between the first mount 611 and one inner wall of the mainbody 630 and a distance d3 between the second mount 621 and the otherinner wall of the main body 630 are set in consideration of the size andluminous efficacy of the light emitting diode package. Here, the innerwall of the main body 630 refers to an inner wall defining the cavity631 and faces the other inner wall thereof in the minor axis directionof the main body 630.

If d2 and d3 are too large, the size of the light emitting diode packageincreases. If d2 and d3 are too small, the distance between the lightemitting diode chip 710 and the inner wall of the main body 630excessively decreases. In this case, light emitted through the sidesurface of the light emitting diode chip 710 is reflected by the innerwall of the main body 630 to enter the light emitting diode chip 710. Asa result, luminous efficacy of the light emitting diode packagedeteriorates. On the package substrate 600 according to this embodiment,the light emitting diode chip 710 having the bump pads 711 biased in onedirection is mounted. Accordingly, in order to ensure the reliableconnection between the light emitting diode chip 710 and the packagesubstrate 600, the first mount 611 and the second mount 621 are alsoformed to be biased in one direction. For example, d2 is 130 μm and d3is 120 μm. However, it should be understood that d2 and d3 are notlimited to different values and may be identical to, or different fromeach other depending upon the locations of the bump pads 711. Forexample, both d2 and d3 may be 130 μm, or 120 μm.

The first terminal 613 of the first lead frame 610 protrudes from oneside surface of the main body 630 in the major axis direction thereof.That is, the first terminal 613 protrudes from one side surface of themain body 630, which has a short length. In addition, the secondterminal 623 of the second lead frame 620 protrudes from the other sidesurface of the main body 630 in the major axis direction thereof. Forexample, each of the first lead frame 610 and the second lead frame 620may have a protrusion distance d4 of 200 μm.

An upper width of the first terminal 613 and an upper width of thesecond terminal 623 are the same as a width of the other side surface ofthe main body 630. Here, the width refers to a distance between oppositesides thereof in the minor axis direction of the package substrate 600.

The first lead frame 610 is formed with a plurality of first protrusions619 on one side surface thereof, which is placed in the minor axisdirection of the main body 630 and has a long length. Here, the one sidesurface of the first lead frame 610 having the plurality of protrusions619 thereon is opposite to the other side surface thereof, which facesthe second lead frame 620 and has a long length.

The plural first protrusions 619 are linearly arranged along the oneside surface of the first lead frame 610 and are spaced apart from oneanother. Each of the first protrusions 619 is formed by half-etching aportion of the lower surface of the first lead frame 610 connected tothe one side surface of the first lead frame 610, which has a longlength. Accordingly, each of the first protrusions 619 protrudes fromthe upper surface of the first lead frame 610 in the lateral direction,as shown in FIG. 20 and FIG. 21. Further, a lower portion of each of thefirst protrusions 619 having a concave shape formed by half-etching isfilled with the main body 630.

The first protrusions 619 of the first lead frame 610 are exposed to oneside surface of the main body 630, which has a long length, as shown inFIG. 17.

The second lead frame 620 is formed with a plurality of secondprotrusions 629 on one side surface thereof, which is placed in theminor axis direction of the main body 630 and has a long length. Here,the one side surface of the second lead frame 620 having the pluralityof second protrusions 629 thereon is opposite to the other side surfacethereof, which faces the first lead frame 610 and has a long length.

The plural second protrusions 629 are linearly arranged along the oneside surface of the second lead frame 620 and are spaced apart from oneanother. Each of the second protrusions 629 is formed by half-etching aportion of the lower surface of the second lead frame 620 connected tothe one side surface of the second lead frame 620, which has a longlength. Accordingly, each of the second protrusions 629 protrudes fromthe upper surface of the second lead frame 620 in the lateral direction,as shown in FIG. 20 and FIG. 21. Further, a lower portion of each of thesecond protrusions 629 having a concave shape formed by half-etching isfilled with the main body 630.

The second protrusions 629 of the second lead frame 620 are exposed tothe other side surface of the main body 630, which has a long length.

According to this embodiment, a bonding area between each of the firstlead frame 610 and the second lead frame 620 and the main body 630 isincreased by the first protrusions 619 and the second protrusions 629.

The main body 630 has half-etched upper corners on one of the oppositeside surfaces thereof in the major axis direction. This structure is anelectrode mark 637 indicating an electrode direction of the packagesubstrate 600. The electrode mark 637 may be disposed at an upperportion of the lead frame connected to one of a cathode and an anode ofan external power source of the package substrate 600.

Referring to FIG. 16, the first connecting portion 614 of the first leadframe 610 and the second connecting portion 624 of the second lead frame620 are exposed to the lower surface of the main body 630. The firstconnecting portion 614 is divided into a first element 615, a secondelement 616 and a fifth element 618, and the second connecting portion624 is divided into a third element 625 and a fourth element 626.

The first element 615 extends from the first terminal 613 and isconnected to the second element 616. That is, the first element 615 hasa large area extending to an external region of the main body 630instead of being restrictively placed in a region of the main body 630.

The second element 616 extends from a portion of the first element 615and has a smaller width than the first element 615. The second element616 has an elongated shape extending towards the other side surface ofthe main body 630.

The fifth element 618 is spaced apart from the second element 616 and isdisposed between the second element 616 and the third element 625. Thefifth element 618 is spaced apart from the second element 616. However,in the first lead frame 610, the second element 616 is partiallyconnected to an upper portion of the fifth element 618. That is, a lowerportion of the first lead frame 610 corresponding to the second element616 and the fifth element 618 is partially separated from an upperportion thereof. However, in the first lead frame 610, the secondelement 616 is partially connected to the upper portion of the fifthelement 618 by the first mount 611 and the first protrusion 619. In thefirst lead frame 610, a space between the second element 616 and thefifth element 618 is filled with the main body 630. With this structure,a bonding area between the first lead frame 610 and the main body 630increases, thereby improving bonding strength therebetween. Further,this structure allows a material for the main body 630 to flowefficiently through a gap between the first lead frame 610 and thesecond lead frame 620. As a result, air tightness between the main body630 and the first lead frame 610 and the second lead frame 620 canimprove. Further, air or gas injected into the cavity 631 of the lightemitting diode package 700 (see FIG. 22 to FIG. 24) during a packagingprocess or generated in the cavity thereof after the packaging processcan be discharged through the upper portion of the first lead frame 610having a separation space.

The third element 625 extends from the second terminal 623 to beconnected to the fourth element 626. Further, the fourth element 626extends from a portion of the third element 625 and has a smaller widththan the third element 625. The fourth element 626 has an elongatedshape extending towards the other side surface of the main body 630.

According to this embodiment, all corners of the first lead frame 610and the second lead frame 620 are formed to have a radius of curvature.As the corners of the first lead frame 610 and the second lead frame 620have a radius of curvature, a bonding area between each of the firstlead frame 610 and the second lead frame 620 and the main body 630increases, thereby improving bonding strength therebetween. In astructure where each of the lead frames has angled corners, the cornersof the lead frames cannot be completely filled with a resin for the mainbody, and a space can be generated between the lead frames and the mainbody 630. However, according to this embodiment, the corners of thefirst lead frame 610 and the second lead frame 620 have a radius ofcurvature and thus can be completely filled with the resin for the mainbody 630. Thus, the package substrate 600 according to this embodimentcan have improvement in air tightness between each of the first leadframe 610 and the second lead frame 620 and the main body 630.

In this embodiment, the first lead frame 610 is formed with two firstthrough-holes 641 and the second lead frame 620 is also formed with twosecond through-holes 642, as shown in FIG. 16. The first through-holes641 are disposed in the first element 615 and are formed to penetratethe first lead frame 610 from the upper surface of the first lead frame610 to the lower surface thereof. In addition, the second through-holes642 are disposed in the third element 625 and are formed to penetratethe second lead frame 620 from the upper surface of the second leadframe 620 to the lower surface thereof.

The two first through-holes 641 and the two second through-holes 642 arefilled with the main body 630, thereby improving bonding strengthbetween each of the first lead frame 610 and the second lead frame 620and the main body 630.

According to this embodiment, the first through-holes 641 and the secondthrough-holes 642 are formed to have sizes that can be formed byinjection molding of the first lead frame 610 and the second lead frame620. In addition, the two first through-holes 641 and the two secondthrough-holes 642 may be formed as large as possible in the firstelement 615 and the third element 625. As the size of each of the firstthrough-holes 641 and the second through-holes 642 increases, airtightness between the first and second lead frames and the main body 630can be further improved. That is, each of the first through-holes 641and the second through-holes 642 may be formed to a size inconsideration of the injection molding process of the first lead frame610 and the second lead frame 620, bonding strength and air tightnessbetween each of the first lead frame 610 and the second lead frame 620and the main body 630. For example, the first through-holes 641 and thesecond through-holes 642 may have a diameter d5 of 300 μm.

In addition, referring to FIG. 16, a first curved corner A of each ofthe first lead frame 610 and the second lead frame 620 has a differentradius of curvature than a second curved corner B thereof. The firstcurved corner A of the first lead frame 610 is a portion at which thefirst element 615 is connected to the second element 616, and faces acorner of the fourth element 626 of the second lead frame 620. Inaddition, the first curved corner A of the second lead frame 620 is aportion at which the third element 625 is connected to the fourthelement 626, and faces a corner of the fifth element 618 of the firstlead frame 610.

The first connecting portion 614 of the first lead frame 610 and thesecond connecting portion 624 of the second lead frame 620 contact anelectrically conductive bonding agent. Here, since the first curvedcorner A corresponds to a portion of each of the first connectingportion 614 and the second connecting portion 624, the width of whichabruptly decreases, the electrically conductive bonding agent is morelikely to spreading from the interior of each of the first connectingportion 614 and the second connecting portion 624 towards the main body630 through the first curved corner A than other regions of the firstand second lead frames. When the electrically conductive bonding agentcontacting the first connecting portion 614 spreads to contact thesecond connecting portion 624 or the electrically conductive bondingagent contacting the second connecting portion 624 spreads to contactthe first connecting portion 614, short circuit can occur between thefirst lead frame 610 and the second lead frame 620. To prevent thisproblem, it is desirable that the first curved corner A of the firstlead frame 610 be spaced apart as far as possible from the corner of thefourth element 626 of the second lead frame 620 facing the first curvedcorner A. In addition, it is desirable that the first curved corner A ofthe second lead frame 620 be spaced apart as far as possible from thecorner of the fifth element 618 of the first lead frame 610 facing thefirst curved corner A. Accordingly, the first curved corner A of each ofthe first lead frame 610 and the second lead frame 620 has a smallradius of curvature in order to be spaced apart as far as possible fromthe corner of the other lead frame facing the first curved corner A.

The second curved corner B of the first lead frame 610 is a portion ofthe first element 615 subjected to rounding treatment such that thewidth of the first element 615 is decreased from the same width as thefirst terminal 613. In addition, the second curved corner B of thesecond lead frame 620 is a portion of the third element 625 subjected torounding treatment such that the width of the third element 625 isdecreased from the same width as the second terminal 623. The secondcurved corner B of each of the first lead frame 610 and the second leadframe 620 is placed near the side surface of the main body 630 in theminor axis direction thereof.

The opposite side surfaces of the main body 630 in the minor axisdirection thereof have a smaller bonding area with respect to the firstlead frame 610 and the second lead frame 620 than the central portion ofthe main body 630. Accordingly, the second curved corners B of the firstlead frame 610 and the second lead frame 620 placed near the oppositeside surfaces of the main body 630 are formed to have a large radius ofcurvature in order to increase the bonding area with respect to the mainbody 630. Further, since the second curved corners B of the first leadframe 610 and the second lead frame 620 have a large radius ofcurvature, the main body 630 can be brought into close contact with thesecond curved corners B. Accordingly, bonding strength and adhesionbetween each of the first lead frame 610 and the second lead frame 620and the main body 630 may improve by the second curved corners B of thefirst lead frame 610 and the second lead frame 620 having a large radiusof curvature. The light emitting diode package including the packagesubstrate 600 has good air tightness, thereby preventing foreign matterincluding gas, moisture, and dust from entering the light emitting diodepackage.

As such, according to this embodiment, the first lead frame 610 and thesecond lead frame 620 are formed such that the second curved corners Bhave a larger radius of curvature than the first curved corners A, inconsideration of prevention of short circuit due to the electricallyconductive bonding agent and improvement in bonding strength andadhesion to the main body 630.

Further, FIG. 18 is a cross-sectional view (E1-E2) taken in the majoraxis direction of the package substrate 600 according to the thirdembodiment. FIG. 19 is a cross-sectional view (E3-E4) taken in the majoraxis direction of the package substrate 600 according to the thirdembodiment. In addition, FIG. 20 is a cross-sectional view (E5-E6) takenin the minor axis direction of the package substrate 600 according tothe third embodiment. Again FIG. 15 illustrates E1-E2, E3-E4, E5-E6 andE7-E8.

Referring to FIG. 15 and FIG. 18, an inner wall of the main body 630 isformed with a groove 635 at an upper portion thereof. The groove 635 isformed on the main body 630 towards an outer wall of the main body 630.The groove 635 is formed between the upper surface of the main body 630and the inner wall thereof defining the cavity 631. That is, an upperportion of the package substrate 600 has a multi-step structure whereina corner connecting the upper surface of the main body 630 to the innerwall thereof is depressed by the groove 635.

Although FIG. 15 shows the groove 635 formed on the inner wall of themain body 630 in the major axis direction thereof, it should beunderstood that the location of the groove 635 is not limited thereto.For example, the groove 635 may be formed on the entire inner wall ofthe main body 630.

When the cavity 631 is filled with the sealing member (not shown) or thevolume of the sealing member expands due to temperature variation, thesealing member can overflow from the cavity 631 of the main body 630.Then, the sealing member overflowing from the cavity 631 flows into thegroove 635. Accordingly, the groove 635 can prevent the sealing memberfrom covering the upper surface of the main body 630.

Comparing FIG. 18 with FIG. 20, an inclination α2 of the inner wall ofthe main body 630 in the minor axis direction is smaller than aninclination α1 of the inner wall of the main body 630 in the major axisdirection (α1). Here, the inclination is defined between the bottom ofthe cavity 631 and the inner wall of the main body. That is, the innerwall of the main body 630 in the minor axis direction is steeper thanthe inner wall of the main body 630 in the major axis direction.

Referring to FIG. 22 to FIG. 24, when the light emitting diode chip 710is mounted on the package substrate 600, a distance between the lightemitting diode chip 710 and the inner wall of the main body 630 in theminor axis direction is shorter than a distance between the lightemitting diode chip 710 and the inner wall of the main body 630 in themajor axis direction. That is, the distance between a side surface thelight emitting diode chip 710 and the inner wall of the main body 630 inthe minor axis direction is short. Accordingly, the inclination of theinner wall of the main body 630 in the minor axis direction is set inconsideration of the fact that the main body 630 has a limited width inthe minor axis direction and is formed by injection molding. Further, itis desirable that light emitted through the side surface of the lightemitting diode chip 710 be reflected in an upward direction of thepackage substrate 600. Accordingly, the inner wall of the main body 630in the minor axis direction may be formed to prevent the light emittedthrough the side surface of the light emitting diode chip 710 fromreentering the light emitting diode chip 710 after being reflected bythe inner wall of the main body 630. As such, it is desirable that theinclination α2 of the inner wall of the main body 630 in the minor axisdirection be set in consideration of the distance to the light emittingdiode chip 710, the injection molding process, reentrance of light, andthe like.

A shown in FIG. 23, the distance between the light emitting diode chip710 and the inner wall of the main body 630 in the major axis directionis greater than that in the minor axis direction. That is, a sufficientspace is formed between the light emitting diode chip 710 and the innerwall of the main body 630 in the major axis direction. Accordingly, itis desirable that the inclination α1 of the inner wall of the main body630 in the major axis direction be set to allow light emitted from thelight emitting diode chip 710 to travel in the upward direction of thepackage substrate 600 instead of reentering the light emitting diodechip 710.

For example, the inclination α1 of the inner wall of the main body 630in the major axis direction is 147° and the inclination α2 of the innerwall of the main body 630 in the minor axis direction is 122°.

With this structure, the light emitting diode package 700 can preventlight emitted from the light emitting diode chip 710 from reentering thelight emitting diode chip 710 after being reflected by the inner wall ofthe main body 630, thereby minimizing light loss of the light emittingdiode package.

FIG. 22 to FIG. 24 are views of a light emitting diode package accordingto a further embodiment of the present disclosure.

FIG. 22 is a top view of the light emitting diode package according to afurther embodiment. FIG. 23 is a cross-sectional view (F1-F2) of thelight emitting diode package shown in FIG. 22. FIG. 24 is across-sectional view (F3-F4) of the light emitting diode package shownin FIG. 22.

The light emitting diode package 700 includes a package substrate 600, alight emitting diode chip 710, a Zener diode chip 720, and a sealingmember 750. The package substrate 600 is the package substrate accordingto the third embodiment described with reference to FIG. 12 to FIG. 21.

Bump pads 711 are disposed on a lower surface of the light emittingdiode chip 710. The bump pads 711 of the light emitting diode chip 710include a bump pad electrically connected to an n-type semiconductorlayer of the light emitting diode chip 710 and a bump pad electricallyconnected to a p-type semiconductor layer thereof.

The light emitting diode chip 710 is disposed on the first mount 611 andthe second mount 621. Here, an electrically conductive bonding agent 730is interposed between the bump pads 711 and each of the first mount 611and the second mount 621. The light emitting diode chip 710 is securedto the first mount 611 and the second mount 621 and is electricallyconnected thereto by the electrically conductive bonding agent, as shownin FIG. 24. For example, the electrically conductive bonding agent 730(FIG. 23) is a solder.

The Zener diode chip 720 is disposed on the second Zener connectingportion 662 and is connected to the second Zener connecting portion 662by a wire, as shown in FIG. 23. Here, the Zener diode chip 720 isprovided on upper and lower surfaces thereof with bump pads 721electrically connected to the Zener diode chip 720.

An electrically conductive bonding agent 730 may be disposed between thebump pads 721 of the Zener diode chip 720 and the second Zenerconnecting portion 662. Accordingly, the Zener diode chip 720 is securedto an upper portion of the second Zener connecting portion 662 and iselectrically connected to the second Zener connecting portion 662 by theelectrically conductive bonding agent 730.

The first mount 611 and the first Zener connecting portion 661 areformed on the first lead frame 610 and are electrically connected toeach other. Further, the second mount 621 and the second Zenerconnecting portion 662 are formed on the second lead frame 620 andelectrically connected to each other.

As such, in the light emitting diode package 700 according to thisembodiment, the light emitting diode chip 710 is electrically connectedin parallel to the Zener diode chip 720.

The cavity 631 of the package substrate 600, which has the lightemitting diode chip 710 and the Zener diode chip 720 therein, is filledwith the sealing member 750.

Although some embodiments have been described herein with reference tothe accompanying drawings, it should be understood that theseembodiments are provided for illustration only and are not to beconstrued in any way as limiting the present disclosure. Therefore, itshould be understood that the scope of the present disclosure should bedefined by the appended claims and equivalents thereto.

We claim:
 1. A light emitting diode package, comprising: a main bodycomprising a cavity at an upper portion of the main body and comprisingtwo short side surfaces facing each other and two long side surfacesfacing each other; a first lead frame coupled to the main body andcomprising a first mount and a first groove that are disposed at anupper surface of the first lead frame, the first mount exposed to thecavity and the first groove covered by the main body; and a second leadframe spaced apart from the first lead frame in a lateral direction andcoupled to the main body, the second lead frame comprising a secondmount and a second groove that are disposed at an upper surface of thesecond lead frame, the second mount exposed to the cavity and the secondgroove covered by the main body, wherein the first lead frame comprisesa first connecting portion including a first end protruding from themain body and a second connecting portion extended from the firstconnecting portion, and wherein the second lead frame comprises a thirdconnecting portion including a second end protruding from the main bodyand a fourth connecting portion extended from the third connectingportion, wherein at least one of the second connecting portion and thefourth connecting portion intersects with a central line perpendicularto the lateral direction.
 2. The light emitting diode package of claim1, wherein the main body further comprises a bottom surface and whereinthe bottom of the main body is located higher than a bottom surface ofthe first lead frame.
 3. The light emitting diode package of claim 1,wherein the first end and the second end protrude from the two shortside surfaces, respectively, and are configured to reflect light.
 4. Thelight emitting diode package of claim 1, wherein each of the firstgroove and the second groove forms a penetration path from the main bodyto an interior of the cavity.
 5. The light emitting diode package ofclaim 1, wherein the cavity has a taper structure having a widthgradually increasing from a lower portion to an upper portion of thecavity.
 6. The light emitting diode package of claim 1, furthercomprising a light emitting diode chip disposed in the cavity of themain body and electrically connected to the first mount and the secondmount.
 7. The light emitting diode package of claim 6, wherein the lightemitting diode chip comprises: a substrate having an elongated shape inone direction thereof; a light emitting structure comprising a firstsemiconductor layer, an active layer, and a second semiconductor layerthat are stacked on a surface of the substrate; a first bump padelectrically connected to the first semiconductor layer; and a secondbump pad spaced apart from the first bump pad and electrically connectedto the second semiconductor layer.
 8. A light emitting diode package,comprising: a main body comprising a cavity at an upper portion of themain body and comprising two first side surfaces facing each other andtwo second side surfaces facing each other; a first lead frame coupledto the main body and comprising a first mount and a first groove thatare disposed at an upper surface of the first lead frame, the firstmount exposed to the cavity and the first groove covered by the mainbody; and a second lead frame spaced apart from the first lead frame ina lateral direction and coupled to the main body, the second lead framecomprising a second mount and a second groove that are disposed at anupper surface of the second lead frame, the second mount exposed to thecavity and the second groove covered by the main body, wherein the firstlead frame comprises a first connecting portion including a first endexposed outside of the main body and a second connecting portionextended from the first connecting portion, and wherein the second leadframe comprises a third connecting portion including a second endexposed outside of the main body and a fourth connecting portionextended from the third connecting portion, and wherein the secondconnecting portion and the fourth connecting portion have half etchedportions at corners of lower surfaces of the second connecting portionand the fourth connecting portion.
 9. The light emitting diode packageof claim 8, wherein the main body further comprises a bottom surface andwherein the bottom of the main body is located higher than a bottomsurface of the first lead frame.
 10. The light emitting diode package ofclaim 8, wherein the second connecting portion and the fourth connectingportion intersect with a central line perpendicular to the lateraldirection.
 11. The light emitting diode package of claim 8, wherein thefirst connecting portion comprises a first element extending from thefirst end and a second element extending from a portion of the firstelement towards the second end and having a smaller width than the firstelement.
 12. The light emitting diode package of claim 8, wherein thesecond connecting portion comprises a third element extending from thesecond end and a fourth element extending from a portion of the thirdelement towards the first end and having a smaller width than the thirdelement.
 13. The light emitting diode package of claim 8, wherein thefirst end and the second end protrude from the two short side surfaces,respectively, and are configured to reflect light.
 14. The lightemitting diode package of claim 8, wherein the cavity of the main bodyis configured to taper toward a lower portion of the main body.
 15. Alight emitting diode package, comprising: a main body comprising acavity at an upper portion of the main body and comprising two firstside surfaces facing each other and two second side surfaces facing eachother; a first lead frame coupled to the main body and comprising afirst mount exposed to the cavity; and a second lead frame spaced apartfrom the first lead frame in a lateral direction and coupled to the mainbody, the second lead frame comprising a second mount exposed to thecavity, wherein the first lead frame comprises a first connectingportion including a first reflector protruding from the main body and asecond connecting portion extended from the first connecting portion,and wherein the second lead frame comprises a third connecting portionincluding a second reflector protruding from the main body and a fourthconnecting portion extended from the third connecting portion.
 16. Thelight emitting diode package of claim 15, wherein the main body furthercomprises a bottom surface and wherein the bottom of the main body islocated higher than a bottom surface of the first lead frame.
 17. Thelight emitting diode package of claim 15, wherein the first lead framefurther comprises a first groove disposed at an upper surface of thefirst lead frame and configured to form a penetration path from the mainbody to an interior of the cavity.
 18. The light emitting diode packageof claim 15, wherein the second lead frame further comprises a secondgroove disposed at an upper surface of the second lead frame andconfigured to form a penetration path from the main body to an interiorof the cavity.
 19. The light emitting diode package of claim 15, furthercomprising a light emitting diode chip disposed in the cavity of themain body and electrically connected to the first mount and the secondmount.